Dr. Suraj Parkash Khanna
Principal Scientist
Physics of Energy Harvesting
Email address:
Brief Biodata:

Dr. Suraj P Khanna: Summary of key research achievements

SurajParkash Khanna received hisPh.D. in Electronic and Electrical Engineering from the University of Leeds, Leeds, UK in 2008. He continued as a Post-Doctoral Research Associate atthe University of Leeds until 2011. During these six years at Leeds he worked on molecular beam epitaxial (MBE) growth, semiconductor device microfabrication, quantum cascade lasers (QCLs), high mobility devices for Quantum Hall Effect realization and terahertz frequency optical systems.Thereafter, he worked at the Northwestern University, Evanston, USA as a Research Fellow, working on,metalorgainc vapor phase epitaxy (MOVPE) growth of dilute magnetic semiconductors.

In 2012, he joined CSIR-National Physical Laboratory, New Delhi, India, as a Principal Scientist in core area of Physics and Electronics. Currently he is the Deputy Head for the Decision Package DP#2.07,2D Physics and Quantum Resistance Metrology. His current research interests include development of indigenous Quantum Hall Resistance Primary standard based on GaAs/AlGaAs and Graphene systemsand hybrid heterostructure devices based on the integration of bulk semiconductors with 2D layered (van der Waals) materials for optoelectronic applications. His work has led to a number of research collaborations across Americas & Europe and publication of 5 SCI journal articles with >30 impact factor and 48 SCI journal articles with >3 impact factor.Key Research Highlights are listed below:

DEVICE –self powered UVPhotodetector (2016):
Role: Group leader

Fabrication of high performance photodetectors using molecular beam epitaxy grown GaN is quite challenging & extremely costly. It is thus very essential to develop simple and cost effective fabrication routes to facilitate their large scale deployment. His group successfully demonstrated non-cleanroom fabrication of a hybrid device (r-GO/GaN) that works in self-powered mode for UV detection. The device exhibits high photosensitivity (85%) and fast photoresponse (τrise~60 ms) and recovery times (τfall~267 ms) and an ultrasensitive behavior at low UV light intensity (Prakash et al., Applied Physics Letters109, 242102 (2016)). With further optimization the scheme could be scaled up for mass production of optoelectronic devices based on similar material systems.

DEVICE – electrically tunable terahertz quantum cascade laser (2009):
Role: Primary investigator

He demonstrated the first electrically tunable emission frequency by up to 0.5 THz (covering from ~ 2.9 THz to 3.45 THz) in a single molecular beam epitaxy grown GaAs/AlGaAsterahertz QCL device (Khanna et al.,Applied Physics Letters95, 18, 181101, (2009)); times cited: 21.This QCL device has been uniquely used for difference frequency imaging of plastic based explosive - Pentaerythritoltetranitrate (PETN) and Lactose as reported in Optics Express 17, 23, 20631 (2009); times cited: 22.

DEVICE –worldrecord beating terahertz QCLwithhighest operating temperature (2008): Role: collaborative work
In collaborationwith Prof. Capasso’s group at Harvard University, USA, he was involved indemonstrationof the highest operating temperature178K (for the year 2008-2009), for a three quantum well design MBE grownGaAs/AlGaAsterahertz QCL (Optics Express, 16, 5, 3242, (2008)); times cited: 147.

DEVICE – demonstration of a general technique to reduce the angular divergence in metal-metal waveguide terahertz QCLs (2008): Role: collaborative work
In collaboration with Prof. Colombelli’s groupat Université Paris Sud and CNRS, France,he was involved in demonstration of a general technique to implement reflecting or absorbing boundaries, in the case of Photonic- crystal terahertz semiconductor lasers, where the photonic crystal is implemented via the sole patterning of the device top metallization to reduce the angular divergence in metal-metal waveguide terahertz QCLs (Nature 457, 174-178 (2009); times cited: 174.

Individual Project: He is the principal investigator for a three year DST SERB individual project (fast track young scientist, 2015-2018)

He has published 79 journal articles in peer reviewed SCI journals; H-index of 21; total citations without self-citations 1518. Source

Full publication list at

Educational Qualifications:

Degree Subject University/Institute Year



University of Leeds

2004 - 2008


Nanoscale Science and Technology

University of Leeds

2003 - 2004

  • Academics/Research Experience:
  • YearDurationResearch fieldInstitute ( in India/Abroad) Fellowship

    Jan 2011 - Jan 2012

    1 years

    MOCVD growth of magnetic bipolar heterojunction devices based on (III, Mn)V materials

    Northwestern University

    MOCVD growth of magnetic bipolar heterojunction devices based on (III, Mn)V materials, study of the Landé g-factor, magnetic and electrical properties (using SQUID and magnetoresistance measurement), and structural analysis (using XRD and electron microscopes)

    Feb 2008-Jan 2011

    3 years

    Epitaxial growth of III-V semiconductors, design, fabrication and characterisation of quantum cascade lasers. Invented the first, “Electrically tunable terahertz quantum-cascade laser based on a heterogeneous active region”, lasing from 3.07–3.40 THz.

    University of Leeds

    Worked with a number of collaborators (including Harvard University, University of Texas Austin, Oxford University, Universite Paris-Sud, Johann Wolfgang Goethe-Universitaet Frankfurt) on the MBE growth, fabrication and measurement of terahertz QCLs.

  • Selected publications:
  • Nature Communications 3, 952; (17 July 2012)
    Efficient power extraction in surface-emitting semiconductor lasers using graded photonic heterostructures

    Nature Photonics 5, 306-313; (24 April 2011)
    Coherent sampling of active mode-locked terahertz quantum cascade lasers and frequency synthesis

    Nature Materials 9, 730-735; (8 August 2010)
    Designer spoof surface plasmon structures collimate terahertz laser beams

    Nature Photonics 3, 715-719; (22 November 2009)
    Terahertz amplifier based on gain switching in a quantum cascade laser

    Nature 457, 174-178; (8 January 2009)
    Electrically pumped photonic-crystal terahertz lasers controlled by boundary conditions